Fmr-related phenomena in spintronic devices
WebDistributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). 7.4. 2DEG in oxide materials - "FMR-related phenomena in spintronic devices" Figure 24. Measured resonance linewidth versus dc-bias current by ST-FMR measurements at 5 GHz for (a) a- and (b) c-axis PtMn (10 nm)/Cu (1 nm)/Py (5 nm). Reprinted with … WebHowever, magnetic nanodevices will enable smart GHz-to-THz devices at low power consumption only, if such. Seven decades after the discovery of collective spin excitations in microwave-irradiated ferromagnets, there has been a rebirth of magnonics. However, magnetic nanodevices will enable smart GHz-to-THz devices at low power consumption …
Fmr-related phenomena in spintronic devices
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WebNov 29, 2024 · The star symbol corresponds to θ i obtained from the ST-FMR measurement of the control device with 6-nm MgO insertion between Bi 2 Se 3 and NiO layers. (D) ... WebApr 6, 2024 · The first of those levels are designed to provide a basic interface of the ferromagnetic (FM) layer, which is represented by a time-dependent magnetisation vector, as dictated by a macrospin model....
WebDec 9, 2024 · Spintronics is the most promising technology to develop alternative multi-functional, high-speed, low-energy electronic devices. Due to their unusual physical characteristics, emerging two-dimensional (2D) materials provide a new platform for exploring novel spintronic devices. Recently, 2D spintronics has made great progress … WebMar 15, 2024 · Spin-transfer-torque magnetic random-access memory (STT-MRAM) is a non-volatile type solid state memory device and has been considered as a promising candidate for future embedded memory applications [1], [2]. As STT-MRAM relies on the spin filtering effect, the efficiency of generating a spin torque cannot exceed one.
WebMay 22, 2024 · FMR-related phenomena in spintronic devices Yi Wang, Rajagopalan Ramaswamy, Hyunsoo Yang Spintronic devices, such as non-volatile magnetic … WebMay 21, 2024 · PDF - FMR-related phenomena in spintronic devices PDF - Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology.
WebFMR-related phenomena in spintronic devices. Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable …
WebSpintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or other emerging material with strong spin–orbit coupling (SOC), the charge currents induce spin currents … philosophy of community developmentWebOct 31, 2016 · FMR-related phenomena in spintronic devices. Yi Wang, Rajagopalan Ramaswamy and Hyunsoo Yang. 20 June 2024 Journal of Physics D: Applied Physics, … philosophy of community radioWebApr 28, 2024 · By interaction with the local magnetic moments, an RF spin-torque excites the ferromagnetic resonance (FMR) of the FM layer that is sensed by measuring a DC … t-shirt one piece chopperWebSeveral novel phenomena have been shown to emerge from the interaction of conducting electrons with the skyrmion lattice, such as a topological Hall-effect and a spin-transfer torque at ultra-low current densities. t-shirt one piece robloxWebSpintronic devices utilize an electric current to alter the state of a magnetic material and thus find great applications in magnetic memory. Over the last decade, spintronic research has focused largely on techniques based on spin-orbit coupling, such as spin-orbit torques (SOTs), to alter the magnetic state. philosophy of computationWebInstitute of Physics t-shirt one piece filleWebFor effective characterization of this efficiency, ferromagnetic resonance (FMR) based methods, such as spin transfer torque ferromagnetic resonance (ST-FMR) and spin pumping, are commonly utilized in addition to low frequency harmonic or DC measurements. In this review, we focus on ST-FMR measurements for the evaluation of the SOT efficiency. t shirt one punch man